Applied Physics B

, Volume 119, Issue 3, pp 469–473 | Cite as

Ultraviolet lasing action in aligned ZnO nanowall

  • Kosuke Harada
  • Shihomi Nakao
  • Masahiro Takahashi
  • Mitsuhiro Higashihata
  • Hiroshi Ikenoue
  • Daisuke Nakamura
  • Yoshiki Nakata
  • Tatsuo Okada


A vertically aligned ZnO nanowall arrays have been synthesized on a patterned ZnO buffer layer using an interference laser beam. The average height and thickness of the ZnO nanowall were 4 μm and 200 nm, respectively. Room-temperature ultraviolet (UV) lasing was obtained from single piece of ZnO nanowall detached from the substrate. The threshold power density for lasing was estimated to be about 80 kW/cm2. In addition, UV lasing from vertically aligned ZnO nanowall was also observed owing to the presence of holes. The lasing spectra had no regularity in the mode spacing and many different spatial modes, suggesting that the action was supported by the random lasing mechanism. The threshold power density for lasing was about 300 kW/cm2, which was much higher than that of the single piece of ZnO nanowall because of the leakage of the light into buffer layer.


Single Piece Random Lasing Excitation Power Density Threshold Power Density Lasing Mechanism 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • Kosuke Harada
    • 1
  • Shihomi Nakao
    • 1
  • Masahiro Takahashi
    • 1
  • Mitsuhiro Higashihata
    • 1
  • Hiroshi Ikenoue
    • 1
  • Daisuke Nakamura
    • 1
  • Yoshiki Nakata
    • 2
  • Tatsuo Okada
    • 1
  1. 1.Graduate School of ISEEKyushu UniversityFukuokaJapan
  2. 2.Institute of Laser EngineeringOsaka UniversitySuita-shiJapan

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