Design and fabrication of highly dispersive semiconductor double-chirped mirrors
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We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of −3,800 ± 100 fs2 in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer method was used to design the mirror multilayer stack. The mirror contains an epitaxial AlAs/GaAs structure topped with a SiNx antireflective layer.
KeywordsGaAs Dispersion Compensation Group Delay Dispersion AlAs Layer Semiconductor Saturable Absorber
This work was partially supported by the National Centre for Research and Development (NCBiR) under project 02-0009-10/2011, the National Science Centre (NCN) under project 3606/B/T02/2009/36, and by the ERDF within the POIG.02.01.00-14-122/09.
- 14.R. Szipócs, F. Krausz, Patent US005734503A 1998Google Scholar