Applied Physics B

, Volume 108, Issue 1, pp 129–135

Doping-induced changes in the saturable absorption of monolayer graphene



Graphene is a broadband, fast saturable absorber well suited for passive mode-locking of lasers. The broadband absorption, ultra-short recovery time, and low cost of graphene absorbers compare favorably with traditional semiconductor saturable absorber mirrors (SESAMs). However, it remains difficult to tailor the parameters of a monolayer graphene absorber such as the modulation depth and the insertion loss; this limits the absorber’s design freedom, which is often required for mode-locking without Q-switching instability. We demonstrate in this work that, by hole-doping graphene chemically to various Fermi levels, the modulation depth and insertion loss are modified. Further control of graphene’s saturable absorption by electric-field gating and its application to active suppression of Q-switching in lasers is discussed.

Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  1. 1.Department of PhysicsUniversity of Colorado at BoulderBoulderUSA

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