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Applied Physics B

, Volume 103, Issue 4, pp 825–829 | Cite as

Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

  • E. Estacio
  • S. Takatori
  • M. H. Pham
  • T. Yoshioka
  • T. Nakazato
  • M. Cadatal-Raduban
  • T. Shimizu
  • N. Sarukura
  • M. Hangyo
  • C. T. Que
  • M. Tani
  • T. Edamura
  • M. Nakajima
  • J. V. Misa
  • R. Jaculbia
  • A. Somintac
  • A. Salvador
Article

Abstract

Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but it will be more feasible as a spectroscopic THz source due to the absence of complex spectral features in its emission spectrum. The GaAs/Si emission is characterized by Fabry–Perot oscillations but it is 90% of that of p-InAs bulk crystal emission intensity in the reflection geometry. Excitation fluence measurements showed that the InAs/Si film saturates easily due to the laser’s shallow penetration depth in InAs.

Keywords

GaAs AlSb Bulk GaAs Excitation Geometry Intense Terahertz 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • E. Estacio
    • 1
  • S. Takatori
    • 1
  • M. H. Pham
    • 1
  • T. Yoshioka
    • 1
  • T. Nakazato
    • 1
  • M. Cadatal-Raduban
    • 1
  • T. Shimizu
    • 1
  • N. Sarukura
    • 1
  • M. Hangyo
    • 1
  • C. T. Que
    • 2
  • M. Tani
    • 2
  • T. Edamura
    • 3
  • M. Nakajima
    • 4
  • J. V. Misa
    • 5
  • R. Jaculbia
    • 5
  • A. Somintac
    • 5
  • A. Salvador
    • 5
  1. 1.Institute of Laser EngineeringOsaka UniversitySuitaJapan
  2. 2.Research Center for Development of Far-Infrared RegionUniversity of FukuiFukuiJapan
  3. 3.Central Research LaboratoryHamamatsu Photonics K.K.HamamatsuJapan
  4. 4.Institute for Solid State PhysicsThe University of TokyoKashiwaJapan
  5. 5.National Institute of PhysicsUniversity of the PhilippinesDiliman Quezon CityPhilippines

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