In this paper, we propose a novel photovoltaic device using P3HT and ZnO as test materials for the p-type and n-type semiconductors, respectively. To fabricate an electrode of this device, Ag was deposited on a P3HT film by RF-sputtering under light illumination (wavelength λ0=660 nm) while reversely biasing the P3HT/ZnO pn-junction. As a result, a unique granular Ag film was formed, which originated from a phonon-assisted process induced by an optical near-field in a self-organized manner. The fabricated device generated a photocurrent even though the incident light wavelength was as long as 670 nm, which is longer than the long-wavelength cutoff λc (=570 nm) of the P3HT. The photocurrent was generated in a wavelength-selective manner, showing a maximum at the incident light wavelength of 620 nm, which was shorter than λ0 because of the Stark effect brought about by the reverse bias DC electric field applied during the Ag deposition.
Sapphire Substrate Light Illumination Photovoltaic Device Photocurrent Density Reverse Bias Voltage
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