ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition
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Abstract
Atomic layer deposition was used to grow n-type Al-doped ZnO (n-ZnO) and undoped ZnO (i-ZnO) layers on p-type 4H-SiC substrates, to fabricate n-ZnO/p-SiC and n-ZnO/i-ZnO/p-SiC heterojunction light-emitting diodes (LEDs). Electroluminescence (EL) from the n-ZnO/p-SiC LED originated from radiative recombination of donor–acceptor pairs in SiC due to the predominant electron injection from n-ZnO into p-SiC. On the other hand, the n-ZnO/i-ZnO/p-SiC LED exhibited dominant ultraviolet (UV) emission at 393 nm from ZnO. This difference is attributable to the insertion of the undoped i-ZnO layer between n-ZnO and p-SiC, leading to the injection of holes from p-SiC and electrons from n-ZnO into the i-ZnO layer and thus the generation of UV EL from ZnO.
PACS
78.55.Et 78.60.Fi 78.66.HfPreview
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