Applied Physics B

, Volume 98, Issue 2–3, pp 333–336 | Cite as

Quantum interference control of photocurrent injection in Er-doped GaAs

  • R. L. Snider
  • J. K. Wahlstrand
  • H. Zhang
  • R. P. Mirin
  • S. T. Cundiff
Article

Abstract

We measure two-color quantum interference control of photocurrent injection in erbium-doped GaAs. The signal size is the same order of magnitude as from a low-temperature grown GaAs sample, and much larger than in a semi-insulating GaAs sample. Thus erbium-doped GaAs could be useful for fabrication of monolithic optical carrier-envelope phase detectors. We also describe a prism-based two-color interferometer useful for minimizing stray light in quantum interference control measurements.

PACS

42.65.-k 

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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • R. L. Snider
    • 1
    • 2
  • J. K. Wahlstrand
    • 1
  • H. Zhang
    • 1
    • 3
  • R. P. Mirin
    • 4
  • S. T. Cundiff
    • 1
    • 2
    • 3
  1. 1.JILANational Institute of Standards and Technology, and the University of ColoradoBoulderUSA
  2. 2.Department of PhysicsUniversity of ColoradoBoulderUSA
  3. 3.Department of Electrical and Computer EngineeringUniversity of ColoradoBoulderUSA
  4. 4.National Institute of Standards and TechnologyBoulderUSA

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