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Applied Physics B

, Volume 96, Issue 2–3, pp 233–235 | Cite as

Large-area microlens emitters for powerful THz emission

  • G. MatthäusEmail author
  • S. Nolte
  • R. Hohmuth
  • M. Voitsch
  • W. Richter
  • B. Pradarutti
  • S. Riehemann
  • G. Notni
  • A. Tünnermann
Rapid communication

Abstract

A microlens coupled large-area emitter based on low-temperature grown GaAs is presented. A hexagonal microlens array directs the incident pump light into every second gap of a finger electrode structure. Consequently, an unidirectional photocurrent at high acceleration field strengths (50 kV/cm) is achieved, which generates constructively superposed THz emission. Using a Ti:Sapphire oscillator with a maximum average power of about 3 W at a repetition rate of 80 MHz, a net IR-to-THz conversion efficiency up to 1.3×10−4 and a THz average power of 280 μW is achieved.

PACS

42.65.Re 95.85.Gn 85.60.-q 

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References

  1. 1.
    A. Dreyhaupt, S. Winnerl, T. Dekorsky, M. Helm, Appl. Phys. Lett. 86, 121114 (2005) CrossRefADSGoogle Scholar
  2. 2.
    G. Matthäus, S. Nolte, R. Hohmuth, M. Voitsch, W. Richter, B. Pradarutti, S. Riehemann, G. Notni, A. Tünnermann, Appl. Phys. Lett. 93, 091110 (2008) CrossRefADSGoogle Scholar
  3. 3.
    M. Theuer, D. Molter, K. Maki, C. Otani, J.A. L’huillier, R. Beigang, Appl. Phys. Lett 93, 041119 (2008) CrossRefADSGoogle Scholar
  4. 4.
    G. Matthäus, B. Ortat, J. Limpert, S. Nolte, R. Hohmuth, M. Voitsch, W. Richter, B. Pradarutti, A. Tünnermann, Appl. Phys. Lett. 93, 261105 (2008) CrossRefADSGoogle Scholar
  5. 5.
    J.A. L’huillier, G. Torosyan, M. Theuer, Y. Avetisyan, R. Beigang, Appl. Phys. B 86, 185 (2007) CrossRefADSGoogle Scholar
  6. 6.
    J.A. L’huillier, G. Torosyan, M. Theuer, C. Rau, Y. Avetisyan, R. Beigang, Appl. Phys. B 86, 197 (2007) CrossRefADSGoogle Scholar
  7. 7.
    J. Darmo, T. Mnller, G. Strasser, K. Unterrainer, T. Le, A. Stingl, G. Tempea, Opt. Lett. 27, 1941 (2002) CrossRefADSGoogle Scholar
  8. 8.
    G. Chang, C.J. Divin, J. Yang, M.A. Musheinish, S.L. Williamson, A. Galvanauskas, T.B. Norris, Opt. Express 15, 16308 (2007) CrossRefADSGoogle Scholar
  9. 9.
    B. Pradarutti, R. Müller, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, S. Nolte, A. Tünnermann, Opt. Express 15, 17652 (2007) CrossRefADSGoogle Scholar
  10. 10.
    B. Pradarutti, R. Müller, W. Freese, G. Matthäus, S. Riehemann, G. Notni, S. Nolte, A. Tünnermann, Opt. Express 16, 18443 (2008) CrossRefADSGoogle Scholar
  11. 11.
    J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, Cambridge, 2003) Google Scholar
  12. 12.
    J.E. Pedersen, V.G. Lyssenko, J.M. Hvam, P. Uhd Jepsen, S.R. Keiding, Appl. Phys. Lett. 62, 1265 (1993) CrossRefADSGoogle Scholar
  13. 13.
    D.S. Kim, D.S. Citrin, Appl. Phys. Lett. 88, 161117 (2006) CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • G. Matthäus
    • 1
    Email author
  • S. Nolte
    • 1
    • 3
  • R. Hohmuth
    • 2
  • M. Voitsch
    • 2
  • W. Richter
    • 2
  • B. Pradarutti
    • 3
  • S. Riehemann
    • 3
  • G. Notni
    • 3
  • A. Tünnermann
    • 1
    • 3
  1. 1.Institute of Applied PhysicsFriedrich-Schiller-University JenaJenaGermany
  2. 2.BATOP GmbHJenaGermany
  3. 3.Fraunhofer Institute for Applied Optics and Precision EngineeringJenaGermany

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