Large-area microlens emitters for powerful THz emission
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A microlens coupled large-area emitter based on low-temperature grown GaAs is presented. A hexagonal microlens array directs the incident pump light into every second gap of a finger electrode structure. Consequently, an unidirectional photocurrent at high acceleration field strengths (50 kV/cm) is achieved, which generates constructively superposed THz emission. Using a Ti:Sapphire oscillator with a maximum average power of about 3 W at a repetition rate of 80 MHz, a net IR-to-THz conversion efficiency up to 1.3×10−4 and a THz average power of 280 μW is achieved.
PACS42.65.Re 95.85.Gn 85.60.-q
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