Applied Physics B

, Volume 94, Issue 3, pp 483–487 | Cite as

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

  • S. C. Huang
  • H. L. Chang
  • K. W. Su
  • A. Li
  • S. C. Liu
  • Y. F. Chen
  • K. F. Huang
Article

Abstract

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

PACS

78.67.De 42.55.Px 42.60.Gd 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R. Fluck, R. Häring, R. Paschotta, R. Gini, H. Melchior, U. Keller, Eyesafe pulsed microchip laser using semiconductor saturable absorber mirrors. Appl. Phys. Lett. 72, 3273–3275 (1998) CrossRefADSGoogle Scholar
  2. 2.
    R.D. Stultz, V. Leyva, K. Spariosu, Short pulse, high-repetition rate, passively Q-switched Er:yttrium–aluminum–garnet laser at 1.6 microns. Appl. Phys. Lett. 87, 241118 (2005) CrossRefGoogle Scholar
  3. 3.
    H.T. Huang, J.L. He, X.L. Dong, C.H. Zuo, B.T. Zhang, G. Qiu, Z.K. Liu, High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser. Appl. Phys. B 90, 43–45 (2008) CrossRefADSGoogle Scholar
  4. 4.
    S. Kück, K. Petermann, U. Pohlmann, U. Schönhoff, G. Huber, Tunable room-temperature laser action of Cr4+-doped Y3ScxAl5−xO12. Appl. Phys. B 58, 153–156 (1994) CrossRefADSGoogle Scholar
  5. 5.
    N.V. Kuleshov, A.A. Lagatsky, A.V. Podlipensky, V.P. Mikhailov, A.A. Kornienko, E.B. Dunina, S. Hartung, G. Huber, Fluorescence dynamics, excited-state absorption and stimulated emission of Er3+ in KY(WO4)2. J. Opt. Soc. Am. B 15, 1205–1212 (1998) Google Scholar
  6. 6.
    I. Sokólska, E. Heumann, S. Kück, T. Łukasiewicz, Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 μm. Appl. Phys. B 71, 893–896 (2000) ADSGoogle Scholar
  7. 7.
    A. Sennaroglu, Broadly tunable Cr4+-doped solid-state lasers in the near infrared and visible. Prog. Quantum Electron. 26, 287–352 (2002) CrossRefADSGoogle Scholar
  8. 8.
    P. Černý, H. Jelínkova, P. Zverev, T.T. Basiev, Solid state lasers with Raman frequency conversion. Prog. Quantum Electron. 28, 113–143 (2004) CrossRefADSGoogle Scholar
  9. 9.
    Y.F. Chen, Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal. Opt. Lett. 29, 2172–2174 (2004) CrossRefADSGoogle Scholar
  10. 10.
    Y.F. Chen, Efficient 1521-nm Nd :GdVO4 Raman laser. Opt. Lett. 29, 2632–2634 (2004) CrossRefADSGoogle Scholar
  11. 11.
    J.T. Murray, R.C. Powell, D. Smith, W. Austin, R.A. Stolzenberger, Generation of 1.5 μm radiation through intracavity solid-state Raman shifting in Ba(NO3)2 nonlinear crystals. Opt. Lett. 20, 1017–1019 (1995) CrossRefADSGoogle Scholar
  12. 12.
    A. Agnesi, S. Dell’Acqua, G. Reali, Diode-pumped quasi-cw intracavity optical parametric oscillator at 1.57 μm with efficient pulse shortening. Appl. Phys. B 70, 751–753 (2000) ADSGoogle Scholar
  13. 13.
    Y.F. Chen, S.W. Chen, Y.C. Chen, Y.P. Lan, S.W. Tsai, Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity. Appl. Phys. B 77, 493–495 (2003) CrossRefADSGoogle Scholar
  14. 14.
    Y.F. Chen, L.Y. Tsai, Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators. Appl. Phys. B 82, 403–406 (2006) CrossRefADSGoogle Scholar
  15. 15.
    Y.F. Chen, Design criteria for concentration optimization in scaling diode end-pumped lasers to high powers: influence of thermal fracture. IEEE J. Quantum Electron. 35, 234–239 (1999) CrossRefGoogle Scholar
  16. 16.
    H.J. Zhang, X.L. Meng, L. Zhu, H.Z. Zhang, P. Wang, J. Dawes, C.Q. Wang, Y.T. Chow, Investigation on the growth and laser properties of Nd:GdVO4 single crystal. Cryst. Res. Technol. 33, 801–806 (1998) CrossRefGoogle Scholar
  17. 17.
    T. Ogawa, Y. Urata, S. Wada, K. Onodera, H. Machida, H. Sagae, M. Higuchi, K. Kodaira, Efficient laser performance of Nd:GdVO4 crystals grown by the floating zone method. Opt. Lett. 28, 2333–2335 (2003) CrossRefADSGoogle Scholar
  18. 18.
    V. Lupei, N. Pavel, Y. Sato, T. Taira, Highly efficient 1063-nm continuous-wave laser emission in Nd:GdVO4. Opt. Lett. 28, 2366–2368 (2003) CrossRefADSGoogle Scholar
  19. 19.
    J. Minch, S.H. Park, T. Keating, S.L. Chuang, Theory and experiment of In1−xyGaxAsyP1−y and In1−xyGaxAlyAs long-wavelength strained quantum-well lasers. IEEE J. Quantum Electron. 35, 771–782 (1999) CrossRefGoogle Scholar
  20. 20.
    J.P. Donnelly, J.N. Walpole, S.H. Groves, R.J. Bailey, L.J. Missaggia, A. Napoleone, R.E. Reeder, C.C. Cook, 1.5-μm tapered-gain-region lasers with high-CW output powers. IEEE Photon. Technol. Lett. 10, 1377–1379 (1998) CrossRefGoogle Scholar
  21. 21.
    N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M.H. Hu, X.S. Liu, M.-J. Li, R. Bhat, C.E. Zah, Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs–InP DBR grown by MOCVD. IEEE J. Sel. Top. Quantum Electron 11, 990–998 (2005) CrossRefGoogle Scholar
  22. 22.
    S.R. Šelmić, G.A. Evans, T.M. Chou, J.B. Kirk, J.N. Walpole, J.P. Donnelly, C.T. Harris, L.J. Missaggia, Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector. IEEE Photon. Technol. Lett. 14, 890–892 (2002) CrossRefGoogle Scholar
  23. 23.
    K.W. Su, S.C. Huang, A. Li, S.C. Liu, Y.F. Chen, K.F. Huang, High-peak-power AlGaInAs quantum-well 1.3-mm laser pumped by a diode-pumped actively Q-switched solid-state laser. Opt. Lett. 31, 2009–2011 (2003) CrossRefADSGoogle Scholar
  24. 24.
    J.J. Zayhowski, A. Mooradian, Single-frequency microchip Nd lasers. Opt. Lett. 14, 24–26 (1989) CrossRefADSGoogle Scholar
  25. 25.
    G.J. Dixon, L.S. Lingvay, R.H. Jarman, Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers. Proc. SPIE 1104, 107 (1989) ADSGoogle Scholar

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • S. C. Huang
    • 1
  • H. L. Chang
    • 1
  • K. W. Su
    • 1
  • A. Li
    • 1
  • S. C. Liu
    • 1
  • Y. F. Chen
    • 1
  • K. F. Huang
    • 1
  1. 1.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan

Personalised recommendations