High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP
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This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.
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- 3.M. Hagberg, S.O. Brien, H. Zhao, R. Lang, 5-W 930-nm Tunable External-Cavity Laser, in: Conference on Lasers and Electro-Optics, Vol. 6 (Washington, DC, 1998), p. 40Google Scholar
- 7.H. Fuchs, D. Woll, T. Ulm, J.A. L’huillier, in preparationGoogle Scholar
- 8.H. Fuchs, O. Casel, M.A. Tremont, L. Friess, R. Wallenstein, Amplitude and phase measurement of 20 ps pulses from a mode-locked high-power InGaAs diode laser MOPA system using frequency-resolved optical gating, in: CLEO/IQEC and PhAST Technical Digest on CD-ROM CTuP9 (Washington, DC, 2004)Google Scholar