Applied Physics B

, Volume 86, Issue 4, pp 623–631 | Cite as

Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

  • Y.-K. Kuo
  • J.-R. Chen
  • M.-L. Chen
  • B.-T. Liou


The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.


GaAs Carrier Density Compressive Strain Critical Thickness Gain Spectrum 
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Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  1. 1.Department of PhysicsNational Changhua University of EducationChanghuaTaiwan
  2. 2.Department of Photonics and Institute of Electro-Optical EngineeringNational Chiao-Tung UniversityHsinchuTaiwan
  3. 3.Department of Mechanical EngineeringHsiuping Institute of TechnologyTaichungTaiwan

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