Applied Physics B

, Volume 85, Issue 4, pp 487–491 | Cite as

Resist-assisted atom lithography with group III elements

  • A. CamposeoEmail author
  • O.M. Maragò
  • B. Fazio
  • B. Klöter
  • D. Meschede
  • U. Rasbach
  • C. Weber
  • E. Arimondo
Rapid communication


Resist-assisted atom lithography with group III elements, specifically with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium atoms and 12 indium atoms per thiol molecule. Our experiments suggest that resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species.


Gallium Atomic Force Microscope Image Atomic Beam Indium Atom Ground State Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • A. Camposeo
    • 1
    Email author
  • O.M. Maragò
    • 2
  • B. Fazio
    • 2
  • B. Klöter
    • 3
  • D. Meschede
    • 3
  • U. Rasbach
    • 3
  • C. Weber
    • 3
  • E. Arimondo
    • 1
  1. 1.CNR-INFM, Dipartimento di Fisica E. FermiUniversità di PisaPisaItaly
  2. 2.CNR-Istituto per i Processi Chimico-Fisici sez. MessinaMessinaItaly
  3. 3.Institut für Angewandte Physik der Universität BonnBonnGermany

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