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Applied Physics B

, Volume 84, Issue 1–2, pp 265–267 | Cite as

High-resolution capability of optical near-field imprint lithography

  • T. YatsuiEmail author
  • Y. Nakajima
  • W. Nomura
  • M. Ohtsu
Article

Abstract

We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide.

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Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  1. 1.Solution-Oriented Research for Science and Technology (SORST)Japan Science and Technology AgencyTokyoJapan
  2. 2.School of EngineeringThe University of TokyoTokyoJapan

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