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Applied Physics B

, Volume 84, Issue 1–2, pp 317–322 | Cite as

Optical study of single InAs on In0.12Ga0.88As self-assembled quantum dots: biexciton binding energy dependence on the dots size

  • C. Dal SavioEmail author
  • K. Pierz
  • G. Ade
  • H.-U. Danzebrink
  • E.O. Göbel
  • A. Hangleiter
Article

Abstract

Single self-assembled InAs quantum dots embedded in a In0.12Ga0.88As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power of the single quantum dot photoluminescence has been used to identify the emission of the biexciton complex. The biexciton binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data is compared with experimental results available in the literature for InAs quantum dots.

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Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • C. Dal Savio
    • 1
    Email author
  • K. Pierz
    • 1
  • G. Ade
    • 1
  • H.-U. Danzebrink
    • 1
  • E.O. Göbel
    • 1
  • A. Hangleiter
    • 2
  1. 1.Physikalisch-Technische Bundesanstalt (PTB)BraunschweigGermany
  2. 2.Institute of Applied PhysicsTechnical University of BraunschweigBraunschweigGermany

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