Time-related luminescence spectroscopic investigation of electron trapping and recombination in infrared stimulated luminescence
- 46 Downloads
Abstract
Infrared stimulated luminescence (ISL) occurred in CaS:Eu,Sm due to formation of luminescent centres Eu2+ and electron trapping centres Sm3+. The electron trapping centres Sm3+ became occupied (forming Sm2+ by trapping excited electrons) in photoluminescence (PL) excitation (PLX) process causing simultaneous ionization of luminescent centres Eu2+ (leaving Eu3+ by losing an electron or capturing a hole). In this paper, the electron trapping in PLX and the recombination in ISL were examined by the time-related PL and ISL spectra of CaS:Eu,Sm. The spectroscopic evidence confirmed that the ISL in CaS:Eu,Sm was produced due to recombination of de-trapped electrons and previously ionized luminescent centres (Eu3+). It was believed that the electron trapping occurred concurrently as occurrence of the PL of Eu2+ in PLX process. However, the recombination of de-trapped electrons and previously ionized luminescent centres took about 10 μs or even more to occur after infrared irradiation.
Keywords
Spectroscopy Physical Chemistry Recombination Apply Physic Quantum ElectronicsPreview
Unable to display preview. Download preview PDF.
References
- 1.S.K. Keller, J.E. Mapes, G. Cheroff: Phys. Rev. 108, 663 (1957)CrossRefGoogle Scholar
- 2.S.P. Keller: J. Chem. Phys. 29, 180 (1958)Google Scholar
- 3.S.P. Keller: Phys. Rev. 113, 1415 (1959)CrossRefGoogle Scholar
- 4.J. Lindmayer: Solid State Technol. 8, 135 (1988)Google Scholar
- 5.J. Lindmayer: Laser Focus World 25, 119 (1989)Google Scholar
- 6.P. Goldsmith, J. Lindmayer, C.Y. Wrigley, Proc. SPIE 1316, 175 (1990)Google Scholar
- 7.H. Nanto, Y. Douguchi, J. Nishishita: Jpn. J. Appl. Phys. 36, 421 (1997)CrossRefGoogle Scholar
- 8.Y. Tamura, A. Shibukawa: Jpn. J. Appl. Phys. 32, 3187 (1998)Google Scholar
- 9.J. Wu, D. Newman, I. Viney: J. Phys. DAppl. Phys. 35, 968 (2002)CrossRefGoogle Scholar
- 10.W. Lehamn, J. Electrochem.: Solid State Sci. 118, 477 (1971)Google Scholar
- 11.W. Lehamn, J. Electrochem.: Solid State Sci. 118, 1164 (1971)Google Scholar
- 12.K. Chakrabarti, V.K. Mathur, J.F. Rhodes, R.J. Abbundi: J. Appl. Phys. 64, 1363 (1988)CrossRefGoogle Scholar
- 13.K. Chakrabarti, V.K. Mathur, L.A. Thomas, R.J. Abbundi: J. Appl. Phys. 65, 2021 (1989)CrossRefGoogle Scholar
- 14.J. Wu, D. Newman, I. Viney: J. Lumin. 99, 234 (2002)Google Scholar
- 15.A.R. Calderbank, R. Laroia, S.W. Mclaughlin: IEEE Trans. on Commun. 46, 1011 (1998)Google Scholar
- 16.K. Hirao, J. Qiu, Y. Shimizugawa: Jpn. J. Appl. Phys. 37, 2259 (1998)CrossRefGoogle Scholar
- 17.D. Jia, W. Jia, D.R. Evans, W.M. Dennis, H. Liu, J. Zhu, W.M. Yen: J. Appl. Phys. 88, 3402 (2000)CrossRefGoogle Scholar
- 18.K. Wakita: Appl. Phys. Lett. 80, 3316 (2002)CrossRefGoogle Scholar
- 19.S.W. Jung: Appl. Phys. Lett. 80, 1924 (2002)CrossRefGoogle Scholar
- 20.Z. He, Y. Wang, L. Sun, X. Xu: Acta Phys. Sin. 49, 1377 (2000)Google Scholar
- 21.J. Wu, D. Newman, I. Viney: Appl. Phys. B 79, 239 (2004)CrossRefGoogle Scholar
- 22.D. Jia, J. Zhu, B. Wu: J. Electrochem. Soc. 147, 386 (2000)CrossRefGoogle Scholar
- 23.L.H. Robins, J.A. Tuchman: Phys. Rev. B 57, 12094 (1998)CrossRefGoogle Scholar