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Applied Physics A

, Volume 76, Issue 2, pp 247–250 | Cite as

Diffusion of Ta in α-Ti

  • R.A. Pérez
  • F. Dyment
  • G. García Bermúdez
  • D. Abriola
  • M. Behar

Abstract.

The diffusion of Ta in the hcp (α) phase of high-purity Ti (99.99%) was studied at different temperatures from 911 K up to 1123 K. The Rutherford Backscattering Spectrometry (RBS) and Heavy Ion RBS (HIRBS) techniques were used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows prediction of the Arrhenius law. The activation energy of the diffusion process is (318±7)kJ/mol, similar to that corresponding to self-diffusion in α-Ti. On the other hand, the measured values of D are systematically lower than those corresponding to self-diffusion by a factor of approximately 5. This reduction could be explained by taking into account the mass difference between Ta and Ti. An increase of the diffusion coefficient was measured when the diffusion proceeds on a less pure Ti (99.9%) matrix. This increment is higher at lower temperatures.

PACS: 66.30.-h; 66.30.Jt 

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Copyright information

© Springer-Verlag 2002

Authors and Affiliations

  • R.A. Pérez
    • 1
  • F. Dyment
    • 1
  • G. García Bermúdez
    • 2
  • D. Abriola
    • 2
  • M. Behar
    • 3
  1. 1.Departamento de Materiales, Comisión Nacional de Energía Atómica, Av. del Libertador 8250, 1429 Buenos Aires, ArgentinaAR
  2. 2.Departamento de Física, CNEA, Av. del Libertador 8250, 1429 Buenos Aires, ArgentinaAR
  3. 3.Instituto de Fisica, Universidad Federal de Río Grande do Sul, Av. Bento Goncalvez 9500, 91501-970 P. Alegre, BrazilBR

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