Applied Physics A

, Volume 74, Issue 5, pp 699–702 | Cite as

An effective compliant substrate for low-dislocation relaxed Si1-xGex growth

  • Y.H. Luo
  • J.L. Liu
  • G. Jin
  • J. Wan
  • K.L. Wang

Abstract.

An effective compliant substrate for Si1-xGex growth is presented. A silicon-on-insulator substrate was implanted with B and O forming 20 wt % borosilicate glass within the SiO2. The addition of the borosilicate glass to the buried oxide acted to reduce the viscosity at the growth temperature of Si1-xGex, promoting the in situ elastic deformation of the thin Si (∼20 nm) layer on the insulator. The sharing of the misfit between the Si and the Si1-xGex layers was observed and quantified by double-axis X-ray diffraction. In addition, the material quality was assessed using cross-sectional transmission electron microscopy, photoluminescence and etch pit density measurements. No misfit dislocations were observed in the partially relaxed 150-nm Si0.75Ge0.25 sample as-grown on a 20% borosilicate glass substrate. The threading dislocation density was estimated at 2×104 cm-2 for 500-nm Si0.75Ge0.25 grown on the 20% borosilicate glass substrate. This method may be used to prepare compliant substrates for the growth of low-dislocation relaxed SiGe layers.

PACS: 81.15.Hi; 61.72.Ff; 68.55.Ln 

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Copyright information

© Springer-Verlag 2001

Authors and Affiliations

  • Y.H. Luo
    • 1
  • J.L. Liu
    • 1
  • G. Jin
    • 1
  • J. Wan
    • 1
  • K.L. Wang
    • 1
  1. 1.Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095-1594, USAUS

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