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Applied Physics A

, Volume 73, Issue 3, pp 265–271 | Cite as

Surface morphology of MgO (100) crystals implanted with MeV Al+ and Al2+ ions

  • G. Kuri
  • G. Materlik
  • V. Hagen
  • R. Wiesendanger

Abstract.

MgO (100) single crystals are implanted with 1.50-MeV Al+ and 3.00-MeV Al2+ ions at a fluence of 1×1015 Al  atoms  cm-2 under high-vacuum conditions. The surface morphology of the substrate is measured in air using atomic force microscopy and X-ray reflectometry followed by computer-simulated spectrum analysis. The ion-irradiated areas are found to protrude to different heights on the nanometre scale. Small height differences are observed in the areas irradiated by Al+ and Al2+ ions of comparable energy, dose rate and total fluence. The results indicate that protrusions are most likely caused by implantation-induced point defects (vacancies) generated in the crystal during implantation. Other possibilities for the cause of protrusions are discussed. Thermal treatment stimulates a partial recovery of the implantation damage and alters the topography of MgO surfaces.

PACS: 61.80Jh; 61.10.Kw; 68.37.Ps; 68.55.Ln 

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Copyright information

© Springer-Verlag 2001

Authors and Affiliations

  • G. Kuri
    • 1
  • G. Materlik
    • 1
  • V. Hagen
    • 2
  • R. Wiesendanger
    • 2
  1. 1.Hamburger Synchrotronstrahlungslabor HASYLAB at Deutsches Elektronen-Synchrotron DESY, 22603 Hamburg, GermanyDE
  2. 2.Institute of Applied Physics, University of Hamburg, 20355 Hamburg, GermanyDE

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