Applied Physics A

, Volume 70, Issue 5, pp 551–554 | Cite as

Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesas

  • G. Jin
  • J.L. Liu
  • S.G. Thomas
  • Y.H. Luo
  • K.L. Wang
  • B.-Y. Nguyen

Abstract.

Self-organized Ge islands grown on patterned Si(001) substrates have been investigated. Selective epitaxial growth (SEG) of Si is carried out with gas-source molecular beam epitaxy to form Si stripe mesas followed by subsequent Ge island growth. Self-aligned Ge islands with regular spacing are formed on the <110>-oriented ridges of the Si mesas. The regular spacing is driven by the repulsive interaction between the neighbor islands through the substrates. A mono-modal distribution of the islands has been observed on the ridges of the Si mesas. The spatial confinement as well as the preferential nucleation is believed to be the mechanism of this alignment of the self-organized Ge islands.

PACS: 81.15Hi; 85.40Ux; 81.10Aj; 68.55Jk 

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Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • G. Jin
    • 1
  • J.L. Liu
    • 1
  • S.G. Thomas
    • 1
  • Y.H. Luo
    • 1
  • K.L. Wang
    • 1
  • B.-Y. Nguyen
    • 2
  1. 1.Device Research Laboratory, Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095-1594, USA (Fax: +1-310/206-8495, E-mail: gjin@ee.ucla.edu)US
  2. 2.Motorola, Semiconductor Technologies, MD: K10, 3501 Ed Bluestein Blvd., Austin, TX 78721, USAUS

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