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Applied Physics A

, Volume 68, Issue 6, pp 705–707 | Cite as

Quasi-monocrystalline silicon for thin-film devices

  • T.J. Rinke
  • R.B. Bergmann
  • J.H. Werner
Rapid communication

Abstract.

Thermal crystallization of a double layer porous Si film creates a monocrystalline Si film with a thin separation layer between the Si film and the reusable starting wafer. The process enables transfer of thin monocrystalline Si films to foreign substrates, whereby devices may be formed before or after separation of the film. Sub-micrometer thick films are almost compact, while films with a thickness of several μm contain voids, and are therefore termed “quasi-monocrystalline”. Internal voids strongly enhance optical absorption by light scattering. The hole mobility is 78 cm2 V-1 s-1 at a p-type starting wafer resistivity of 0.05 Ω cm.

PACS: 78.66Db; 72.20.Fr; 72.80.Cw 

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Copyright information

© Springer-Verlag 1999

Authors and Affiliations

  • T.J. Rinke
    • 1
  • R.B. Bergmann
    • 1
  • J.H. Werner
    • 1
  1. 1.Universität Stuttgart, Institut für Physikalische Elektronik, Pfaffenwaldring 47, D-70569 Stuttgart, Germany (FAX: +49-711/685-7206, E-mail: titus.rinke@ipe.uni-stuttgart.de)DE

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