Applied Physics A

, Volume 66, Issue 5, pp 539–541

Fabrication of silicon nanowires

  • J.L. Liu
  • Y. Lu
  • Y. Shi
  • S.L. Gu
  • R.L. Jiang
  • F. Wang
  • Y.D. Zheng
Regular paper

DOI: 10.1007/s003390050709

Cite this article as:
Liu, J., Lu, Y., Shi, Y. et al. Appl Phys A (1998) 66: 539. doi:10.1007/s003390050709

2

at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO2 in microelectronic technology with careful selection of the SiO2 growth temperatures.

PACS: 85.42; 81.15; 81.60 

Copyright information

© Springer-Verlag 1998

Authors and Affiliations

  • J.L. Liu
    • 1
  • Y. Lu
    • 1
  • Y. Shi
    • 1
  • S.L. Gu
    • 1
  • R.L. Jiang
    • 1
  • F. Wang
    • 1
  • Y.D. Zheng
    • 1
  1. 1.Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210093, P.R. China (Fax: +86-025/3608-130, E-mail: ydzheng@netra.nju.edu.cn)CN

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