Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film
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- Zhu, M., Chen, G. & Chen, P. Appl Phys A (1997) 65: 195. doi:10.1007/s003390050565
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in the range of annealing temperatures used. The PL intensity, weight of the Si4+ states, and the volume fraction of Si nanocrystals exhibit a large increase as Ta>750 °C. The PL peak position is independent of the annealing temperature (Ta). From our observations, the green/blue light emission is related to the defects.