Applied Physics A

, Volume 64, Issue 5, pp 423–430

Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy

  • M. Giesen
  • R.J. Phaneuf
  • E.D. Williams
  • T.L. Einstein
  • H. Ibach

PACS: 85.30; 73.20; 79.60 

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Copyright information

© Springer-Verlag 1997

Authors and Affiliations

  • M. Giesen
    • 1
  • R.J. Phaneuf
    • 1
  • E.D. Williams
    • 1
  • T.L. Einstein
    • 1
  • H. Ibach
    • 3
  1. 1.Physics Department, University of Maryland, College Park, MD 20742-4111, USA (E-mail: m.giesen@fz-juelich.de)US
  2. 2.Laboratory for Physical Sciences, College Park, MD 20740, USAUS
  3. 3.Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D 52425 Jülich, GermanyDE

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