Applied Physics A

, Volume 70, Issue 3, pp 329–331 | Cite as

Nonuniform defect distribution in GaN thin films examined by cathodoluminescence

  • E.M. Goldys
  • M. Godlewski


Room-temperature cathodoluminescence depth-profiling studies of GaN films grown on sapphire and on SiC are reported. The spectral characteristics were quantitatively analysed taking into account reabsorption effects. We show that whereas GaN films grown on sapphire show a uniform defect distribution, in GaN grown on SiC the defect density is clearly nonuniform and new, low-energy lines appear in emission from deeper layers in the film.

PACS: 78.60Hk; 78.66Fd; 71.35 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • E.M. Goldys
    • 1
  • M. Godlewski
    • 2
  1. 1.Semiconductor Science and Technology Laboratories, Macquarie University, Sydney, North Ryde, NSW 2109, Australia (Fax: +61-02/9850-8115, E-mail:
  2. 2.Institute of Physics, Polish Acad. Sciences., 02-668 Warsaw, Al. Lotnikow 32/46, PolandPL

Personalised recommendations