Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide
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Positron lifetime spectroscopy has been employed to study the as-grown n-type 1.2×1018 cm-3 N-doped and p-type 1.8×1018 cm-3 Al-doped 6H-silicon carbide in the temperature range 10 K–300 K. For the p-type material, a positron trapping site, which has a lifetime of 225±11 ps, was found and is attributed to positron annihilating from the VSiVC divacancy-related defect having a neutral charge. For the case of the n-type material, a positron trapping centre having a lifetime of 200±9 ps, attributed to a VSi-related defect, and a shallow trap were observed. The shallow trap, having binding energy of l8 meV was attributed to Rydberg-like states resulting from positron binding with a negative ion.
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