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Applied Physics A

, Volume 70, Issue 1, pp 33–38 | Cite as

Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide

  • C.C. Ling
  • A.H. Deng
  • S. Fung
  • C.D. Beling
Regular paper

Abstract.

Positron lifetime spectroscopy has been employed to study the as-grown n-type 1.2×1018 cm-3 N-doped and p-type 1.8×1018 cm-3 Al-doped 6H-silicon carbide in the temperature range 10 K–300 K. For the p-type material, a positron trapping site, which has a lifetime of 225±11 ps, was found and is attributed to positron annihilating from the VSiVC divacancy-related defect having a neutral charge. For the case of the n-type material, a positron trapping centre having a lifetime of 200±9 ps, attributed to a VSi-related defect, and a shallow trap were observed. The shallow trap, having binding energy of l8 meV was attributed to Rydberg-like states resulting from positron binding with a negative ion.

PACS: 61.72.Ji; 78.70.Bj 

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Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • C.C. Ling
    • 1
  • A.H. Deng
    • 1
  • S. Fung
    • 1
  • C.D. Beling
    • 1
  1. 1.Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P.R. China (Fax: +85-2/2559-9152, E-mail: ccling@hkucc.hku.hk)CN

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