Applied Physics A

, Volume 72, Issue 3, pp 303–306 | Cite as

Soft X-ray fluorescence and photoluminescence of Si nanocrystals embedded in SiO2

  • G.S. Chang
  • J.H. Son
  • K.H. Chae
  • C.N. Whang
  • E.Z. Kurmaev
  • S.N. Shamin
  • V.R. Galakhov
  • A. Moewes
  • D.L. Ederer

Abstract.

We have used ion-beam mixing to form Si nano-crystals in SiO2 and SiO2/Si multilayers, and applied photoluminescence and soft-X-ray emission spectroscopy to study the nanoparticles. Ion-beam mixing followed by heat treatment at 1100 °C for 2 h forms the Si nanocrystals. The ion-beam-mixed sample shows higher PL intensity than that of a Si-implanted SiO2 film. Photon and electron-excited Si L2,3 X-ray emission measurements were carried out to confirm the formation of Si nanocrystal in SiO2 matrix after ion-beam mixing and heat treatment. It is found that Si L2,3 X-ray emission spectra of ion-beam-mixed Si monolayers in heat-treated SiO2 films lead to noticeable changes in the spectroscopic fine structure.

PACS: 78.55.-m; 71.24.+q; 78.70.En 

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Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • G.S. Chang
    • 1
  • J.H. Son
    • 1
  • K.H. Chae
    • 1
  • C.N. Whang
    • 1
  • E.Z. Kurmaev
    • 2
  • S.N. Shamin
    • 2
  • V.R. Galakhov
    • 2
  • A. Moewes
    • 3
  • D.L. Ederer
    • 4
  1. 1.Atomic-scale Surface Science Research Center and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea (Fax: +82-2/312-7090, E-mail: gschang@phya.yonsei.ac.kr)KR
  2. 2.Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, RussiaRU
  3. 3.Department of Physics and Engineering Physics, University of Saskatchewan, Saskatchewan S7N 5E2, CanadaCA
  4. 4.Department of Physics, Tulane University, New Orleans, Louisiana 70118, USAUS

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