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Applied Physics A

, Volume 71, Issue 4, pp 423–432 | Cite as

Size distribution and optical properties of self-assembled Ge on Si

  • L. Vescan
  • M. Goryll
  • T. Stoica
  • P. Gartner
  • K. Grimm
  • O. Chretien
  • E. Mateeva
  • C. Dieker
  • B. Holländer

Abstract.

The distribution of Ge islands is analysed in order to understand their optical behaviour. The Ge islands described in this paper were deposited by low-pressure chemical vapour deposition at relatively high temperature (700 °C), therefore the diffusion length of adatoms is high (∼100 μm) and thus, not the limiting factor for nucleation. By changing the deposition time and the coverage, square-based pyramids, domes and relaxed domes are nucleated. Mainly domes emit light, the emission being in the wavelength range 1.38–1.55 μm. When pyramids or relaxed domes are present, the photoluminescence broadens and decreases in intensity. The electroluminescence of vertically correlated islands increases with the number of layers, i.e. with the number of islands. The nucleation of islands on patterned (001) Si is changed when the deposition is performed on Si mesas with high index facets. The size distribution becomes narrower when the mesa size is decreased. An intermixing of up to 40% Si in the 2D layer was determined from photoluminescence data. PIN diodes fabricated on patterned wafers show an area-dependent electroluminecence related to a different microstructure of islands on large and small mesas. Finally, the lateral ordering on {hkl} facets is discussed.

PACS: 81.15.G; 85.60.J; 78.60.F; 68.55.J; 78.66 

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Copyright information

© Springer-Verlag 2000

Authors and Affiliations

  • L. Vescan
    • 1
  • M. Goryll
    • 1
  • T. Stoica
    • 2
  • P. Gartner
    • 2
  • K. Grimm
    • 1
  • O. Chretien
    • 1
  • E. Mateeva
    • 3
  • C. Dieker
    • 4
  • B. Holländer
    • 1
  1. 1.Institut für Schicht und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany (Fax: +0049-2461/612-940)DE
  2. 2.Institutul National de Fizica Materialelor, R76900 Bucharest, MG7, RomaniaRO
  3. 3.Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, USAUS
  4. 4.Mikrostrukturanalytik, Technische Fakultät der CAU, 24143 Kiel, Germany (E-mail: l.vescan@fz-juelich.de)DE

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