Study of electronic properties on the n-GaN (0001) surface with points defects
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The influence of defects on the surface of the semiconductor is irreversible. The influence of intrinsic point defects on the electronic properties of n-doped GaN (0001) surface is studied based on the first principles. The results show that, the N interstitial defect (Ni) and Ga Vacancy (VGa) are the more easily formed in the case of Si doping. The defect level generated by an appropriate amount of defects contributes to the transition of electrons, thereby improving the n-type conductivity characteristics. In particular, the Ga vacancy makes the work function drop significantly, which promotes the emission of electrons. However, once the defects inside the material exceed a certain level, any defects will play a counterproductive role. This paper could provide some guidance for the preparation of n-GaN optoelectronic devices.
This work is supported by Qing Lan Project of Jiangsu Province-China (Grant No. 2017-AD41779), the Fundamental Research Funds for the Central Universities-China (Grant No. 30916011206) and the Six Talent Peaks Project in Jiangsu Province-China (Grant No. 2015-XCL-008). Meishan Wang of Ludong University is greatly appreciated for the help of first principle calculations.
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