Electronic energy loss (Se) sensitivity of electrochemically synthesized free-standing Cu nanowires irradiated by 120 MeV high energy ion beam of different atomic mass
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Ion beam irradiation is a technique to tune the properties of copper nanowires for various potential applications. Copper nanowires prepared by template-assisted electrochemical deposition have been irradiated with two different ions 16S32 and 79Au197 (Energy = 120 MeV and Charge state = 9 + ), respectively, at different fluences of 1 × 1011, 5 × 1011, 1 × 1012 and 5 × 1012 ions/cm2, to study the role of Se in modifying properties of the nanowires. The rate of energy deposited by incident ion in a material medium is a linear function of atomic number of the incident ion as governed by Bethe-Bloch formula, thus, the modifications produced by both ions in the same host matrix would be different. Scanning Electron Microscopy graphs revealed that nanowires kept their integrity on irradiation with both ions and at all irradiation fluences. The effect of irradiation on the structural properties were studied using X-ray diffraction measurements. Upon irradiation, peak intensity changed significantly due to irradiation-induced defects and was quantitatively calculated using Harris formula. The crystallite size, surface morphology, dislocation density, strengthening coefficient, strain, stress and optical properties were analyzed before and after irradiation. The crystallite size of the nanowires increases with increasing ion fluence and also the strain and dislocation density value decreases for nanowires irradiated with sulphur (9+) ions and opposite trend was observed for nanowires irradiated with Gold (9+) ions. The resistivity data obtained from the I–V characteristics curve was defined by the combined Fuchs–Sondheimer model and Mayadas–Shatzkes model with a surface specularity coefficient of 0.52.
One of the author’s Dr. Rajesh Kumar, acknowledge the FRGS Project No. GGSIPU/DRC/FRGS/2019/1553/15 for the financial support for carrying out of this work. The authors wish to acknowledge the Director, Inter University Accelerator Centre (IUAC), New Delhi, India for providing irradiation facility under the project Ref: IUAC/XIII.3A/59319 as well as other instrumentation facilities. We also thank Pelletron group, IUAC, New Delhi, for expert assistance in the operation of the tandem accelerator. We are also grateful to Dr. S A. Khan for his help in obtaining FESEM images. We would also like to take the opportunity to thank all the reviewers for their effort and expertise in reviewing this paper that has helped in further improving the quality of the research paper.
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Conflict of interest
The authors declare that they have no conflict of interest.
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