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Applied Physics A

, 125:777 | Cite as

A hot isostatic pressing strategy for improving the optical transmission of polycrystalline CVD ZnSe

  • Naiguang Wei
  • Lipeng JiangEmail author
  • Dongxu Li
  • Hai Yang
  • Xiyan Zhang
  • Zhirui Tian
  • Li Guo
  • Xiaohua Liu
  • Zilin Song
  • Jianchun Yang
  • Jianming Li
  • Pengfei Zhang
  • Yongtian Zhao
  • Yanxing Niu
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Abstract

Chemical vapor-deposited zinc selenide samples were subjected to hot isostatic pressing (HIP) conditions in argon. X-ray diffraction, metalloscope, transmission spectra and so on were used to characterize the samples. The effects of HIP temperature (700 °C, 800 °C and 900 °C) and time (10 h, 20 h and 30 h) on the structure, microstructure and optical properties were studied. The results indicated that hot isostatic pressed (HIPed) ZnSe has recrystallized after HIP, the grain size increased significantly with the increase in HIP temperature, and the hot isostatic pressing eliminates the impurities in the material and makes the material evenly distributed. Both the samples HIPed at 900 °C for 10 h and HIPed at 800 °C for 30 h will result in the appearance of large grains; the samples HIPed at 800 °C for 20 h perform the best in transmission at same pressure (80 MPa).

Notes

Acknowledgements

This work was financially supported by the project of The Transformation of Major Science and Technology Achievements of Hebei Province (No. 18041030Z).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Naiguang Wei
    • 1
  • Lipeng Jiang
    • 1
    Email author
  • Dongxu Li
    • 1
  • Hai Yang
    • 1
  • Xiyan Zhang
    • 2
  • Zhirui Tian
    • 1
  • Li Guo
    • 1
  • Xiaohua Liu
    • 1
  • Zilin Song
    • 1
  • Jianchun Yang
    • 1
  • Jianming Li
    • 1
  • Pengfei Zhang
    • 1
  • Yongtian Zhao
    • 1
  • Yanxing Niu
    • 1
  1. 1.General Research Institute for Nonferrous MetalsGRINM Guojing Advanced Materials Co., Ltd.SanheChina
  2. 2.School of Materials Science and EngineeringChangchun University of Science and TechnologyChangchunChina

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