Facile synthesis and controlling factors of highly uniform nanostructured MoS2 thin films as buffer layers in gas sensors
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Large-area highly uniform MoS2 thin film deposition by surface modification and solvent miscellany, crystallization and tuneable grain size by annealing and sulfurization facilitates the implementation of MoS2 thin films as buffer layers. MoS2 is a layered material and is not soluble in any solvent and the dispersion will not be uniform which can be solved with our solvent system. To use MoS2 as a buffer layer, many factors are significant in controlling the parameters without affecting the material chemical characteristics. Thermal treatment with modulated sulfurization reforms the grain morphology yielding the flexibility of usage in more applications. MoS2 uniform thin film showed ultra-fast response and recovery rates of approximately 3 and 2.5 s for low concentrations of hydrogen gas and change is sensitivity for a small change in temperature. The uniform scattering with nano-sized grains throughout the film increases the surface area and hence escorts the thin film usage as buffer layers in MISIM structure of memristors. Cost-effective growth, deposition and fabrication techniques is a breakthrough for metal sulfide thin films.
This research was, in part, supported by the Ministry of Science and Technology, Taiwan, R.O.C., Aim for the Top University Project for National Cheng Kung University. The authors gratefully acknowledge the financial support provided by the Ministry of Science and Technology, Taiwan (Grants MOST 106-2221-E-006-226).
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Conflict of interest
There are no conflicts of interest to declare.
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