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Applied Physics A

, 125:599 | Cite as

Electrodeposition of Cu thin film assisted by Cu nanoparticles for Cu2ZnSnSe4 solar cell applications

  • Zhaojing Zhang
  • Jiajia Guo
  • Shoushuai Gao
  • Jianping AoEmail author
  • Liyong Yao
  • Jinlian Bi
  • Qing Gao
  • Ming-Jer Jeng
  • Guozhong Sun
  • Zhiqiang Zhou
  • Fangfang Liu
  • Yun Sun
  • Yi ZhangEmail author
Article
  • 32 Downloads

Abstract

Electrodepositing high-quality Cu thin film on Mo substrate is important for fabricating high-efficiency Cu2SnZnSe4 (CZTSe) solar cells via the electrodeposition technique. In this study, a novel route to modify the surface morphology of Cu thin film is reported by utilizing pre-embedded Cu nanoparticles on Mo substrate. The Cu nanoparticles with controlled size and density are synthesized after soaking the pre-fabricated Cu thin films in HCl solution. After employing these Cu nanoparticles to act as nuclei points during the electrodeposition process, compact and flat Cu thin films are successfully electrodeposited in simple salt solution (with no additives) without the precise control of substrate properties and deposition parameters. Due to the electrodeposition of high-quality Cu thin films, CZTSe thin films with compact and uniform grains are prepared. As a result, the carrier density in the CZTSe absorber is significantly improved and a deep level defect induced by the poor morphology metal precursor is inhibited. Finally, a CZTSe solar cell with a power conversion efficiency of 7.36% is fabricated.

Notes

Acknowledgements

This work was supported by the National Natural Science Foundation of China (61674082 and 51572132), the National Key R&D Program of China (2018YFB1500202), the Tianjin Natural Science Foundation of Key Project (16JCZDJC30700), the Yang Fan Innovative & Entrepreneurial Research Team Project (2014YT02N037), and the China Postdoctoral Science Foundation (2018M631730).

Compliance with ethical standards

Conflict of interest

The authors declare no competing financial interests.

Supplementary material

339_2019_2800_MOESM1_ESM.doc (6.6 mb)
Supplementary material 1 (DOC 6764 kb)

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinNankai UniversityTianjinPeople’s Republic of China
  2. 2.Tianjin Institute of Power SourceTianjinPeople’s Republic of China
  3. 3.Department of Electronic EngineeringChang Gung UniversityTaoyüanTaiwan
  4. 4.Department of Otolaryngology, Head and Neck SurgeryChang Gung Memorial HospitalLinkouTaiwan
  5. 5.Renewable Energy Conversion and Storage CenterNankai UniversityTianjinPeople’s Republic of China

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