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Applied Physics A

, 125:813 | Cite as

Nanocantilever tri-gate junctionless cuboidal nanowire-FET-based directional pressure sensor

  • Aman Aggarwal
  • Ashish RamanEmail author
  • Naveen Kumar
  • Sarabdeep Singh
Article
  • 21 Downloads

Abstract

This paper proposes a designing of a directional pressure sensor based on NEMS nanocantilever structure embedded on uniformly and highly doped junctionless triple gate (TG) cuboidal nanowire-FET (TG-JL NWFET) device. In the designed device, each gate electrode is used as nanocantilever beam structure and the magnitude of pressure on the cantilever is measured by observing different electrical characteristics on bending of the cantilever beam, i.e., for 0 nm, 0.90 nm and 1.75 nm bending of the cantilever, respectively. To detect the direction of pressure, the performance of the pressure sensor for bending in single, dual and triple directions is compared with each other. In single direction bending, the top of the cantilever completely bends and the rest of the cantilevers remain in an equilibrium position. In the dual direction, bending right and left cantilevers are completely bent and the top cantilevers remain in an equilibrium position; in triple bending, all the three cantilevers completely bend simultaneously. The device parameters such as electric field, energies of conduction and valence band and recombination rate are observed to study the device physics. ON to OFF current ratio, threshold voltage, drain-induced barrier leakage and subthreshold slope are used as performance parameters for analyzing the performance of single, dual and triple direction bending with respect to different bending of the cantilever. The ON current obtained for triple direction bending is 14.7 and 12.5% higher than the dual direction and single direction bending of the cantilever, respectively.

Notes

References

  1. 1.
    Alessandro Sabato, Christopher Niezrecki, Giancarlo Fortino, Wireless MEMS-based accelerometer sensor boards for structural vibration monitoring: a review. IEEE. Sens. J. 17(2), 226–235 (2017)ADSCrossRefGoogle Scholar
  2. 2.
    Nicolas André, Bertrand Rue, Gilles Scheen, Denis Flandre, Laurent A. Francis, Jean-Pierre Raskin, Out-of-plane MEMS-based mechanical airflow sensor co-integrated in SOI CMOS technology. Elsevier Sens. Actuators. A 206, 67–74 (2014)CrossRefGoogle Scholar
  3. 3.
    A. Terunobu, T. Andreas, H. Hans-Rudolf, B. Jiirgen, V. Peter, S. Urs, N.F. de Rooij, Characterization of an integrated force sensor based on a MOS transistor for applications in scanning force microscopy. Elsevier Sens. Actuators. A 64(1), 1–6 (1998)CrossRefGoogle Scholar
  4. 4.
    B. Razavi, Design of analog CMOS integrated circuits (McGraw-Hill, Boston, 2001)Google Scholar
  5. 5.
    S.F.U. Julia, Dominant subthreshold conduction paths in short-channel MOSFET‘s. IEEE Electron. Device. Lett. 32(10), 1331–1333 (1994)Google Scholar
  6. 6.
    Kaushik Nayak, Mohit Bajaj, Aniruddha Konar, Philip J. Oldiges, Kenji Natori, Hiroshi Iwai, Kota V.R.M. Murali, Valipe Ramgopal Rao, CMOS logic device and circuit performance of si gate all around nanowire MOSFET. IEEE Trans. Electron. Devices. 61(9), 3066–3074 (2014)ADSCrossRefGoogle Scholar
  7. 7.
    Hui Pan, Yuan Ping Feng, Semiconductor nanowires and nanotubes: effects of size and surface-to-volume ratio. ACS Nano. 2(11), 2410–2414 (2008)CrossRefGoogle Scholar
  8. 8.
    Eric Stern, Robin Wagner, Fred J. Sigworth, Ronald Breaker, Tarek M. Fahmy, Mark A. Reed, Importance of the Debye screening length on nanowire field effect transistor sensors. Nano. Lett. 7(11), 3405–3409 (2007)ADSCrossRefGoogle Scholar
  9. 9.
    Joshua A. Schultz, Stephen M. Heinrich, Fabien Josse, Isabelle Dufour, Nicholas J. Nigro, Luke A. Beardslee, Oliver Brand, Lateral-mode vibration of microcantilever-based sensors in viscous fluids using Timoshenko beam theory. J. Microelectromech. Syst. 24(4), 848–860 (2015)CrossRefGoogle Scholar
  10. 10.
    Gagan Kumar, Ashish Raman, Pressure sensor based on MEMS nano cantilever beam structure as a hetero dielectric gate electrode of dopingless TFET. Elsevier. Superlattices. Microstruct. 45(11), 535–547 (2016)ADSMathSciNetCrossRefGoogle Scholar
  11. 11.
    S. Singh, A. Raman, A dopingless gate-all-around (GAA) gate-stacked nanowire FET with reduced parametric fluctuation effects. J Comput Electron. 17(3), 967–976 (2018)CrossRefGoogle Scholar
  12. 12.
    S. Cho, K.R. Kim, B.G. Park, I.M. Kang, RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs. IEEE Trans. Electron. Devices. 58(5), 1185–1188 (2011)ADSCrossRefGoogle Scholar
  13. 13.
    Sarabdeep Singh, Ashish Raman, Gate all around charge plasma based dual gate material gate stack nanowire FET for enhanced analog performance. IEEE Trans. Electron. Devices. 65(7), 1–7 (2018)ADSCrossRefGoogle Scholar
  14. 14.
    Michael D. Pocha, Glenn A. Meyer, Charles F. McConaghy, Steve P. Swierkowski, Jesse D. Wolfe, Miniature accelerometer and multichannel signal processor for fiberoptic Fabry-Pérot sensing. IEEE Sens. J. 7(2), 285–291 (2007)ADSCrossRefGoogle Scholar
  15. 15.
    Stefano Dellea, Patrice Rey, Giacomo Langfelder, MEMS gyroscopes based on piezoresistive NEMS detection of drive and sense motion. IEEE J. Microelectromech. Syst. 26(6), 1389–1399 (2017)CrossRefGoogle Scholar
  16. 16.
    ATLAS Device Simulation Software, Silvaco International (Santa Clara, CA, 2014)Google Scholar
  17. 17.
    Ming-Hung Han, Chun-Yen Chang, Yi-Ruei Jhan, Wu Jia-Jiun, Hung-Bin Chen, Ya-Chi Cheng, Wu Yung-Chun, Characteristics of p-type junctionless gate all around nanowire transistor and sensitivity analysis. IEEE Electron. Device. Lett. 34(2), 157–159 (2013)ADSCrossRefGoogle Scholar
  18. 18.
    Navaneet Kumar Singh, Ashish Raman, Sarabdeep Singh, Naveen Kumar, A novel high mobility model In1 − XGaXAs cylindrical gate nanowire FET for gas sensing application with enhanced sensitivity. Elsevier Superlattices. Microstruct. 111, 518–528 (2017)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Aman Aggarwal
    • 1
  • Ashish Raman
    • 1
    Email author
  • Naveen Kumar
    • 1
  • Sarabdeep Singh
    • 1
  1. 1.VLSI Design Lab., Department of Electronics and CommunicationsDr BR Ambedkar National Institute of TechnologyJalandharIndia

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