Structure dependence of GaN-based nanopillar-shaped crystals grown on a quartz glass substrate on their growth conditions
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Nanopillar-shaped crystals of gallium–nitride-based semiconductors were grown on a quartz glass substrate using molecular beam epitaxy apparatus. Two sets of radio-frequency plasma-assisted active nitrogen sources were simultaneously operated and almost same amounts of indium and gallium were supplied during the growths. The effects of their growth conditions, i.e., the amount of the indium supply, flow rate of nitrogen gas, and growth temperature, on the structures of the nanopillar-shaped crystals were investigated.
The authors express their gratitude to Professor K. Saito and Mr. K. Sato for their valuable suggestions on the FE-SEM observations. Part of this research was supported by JSPS KAKENHI (nos. JP25420314 and JP16K06290).
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