Applied Physics A

, 125:81 | Cite as

A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET

  • Bandi Venkata ChandanEmail author
  • Kaushal Nigam
  • Dheeraj Sharma
  • Vinay Anand Tikkiwal


In this letter, we have explored the effect of metal strip (MS) approach on electrically doped tunnel field effect transistor (ED-TFET) in the presence of hetero-material (HM) and named the proposed device as hetero-material metal strip electrically doped tunnel FET (HM–MS–ED-TFET). Intention of our work is to suppress the ambipolar current and improve the device electronic characteristics; for this, we have considered MS at drain channel (D/C) region where energy band becomes wider which helps in suppression the ambipolarity and HM is considered at source region which will reduce the tunneling barrier width and increase the tunneling area at source channel (S/C) which helps to improve the ON current and other device performance. To support our work and make things easily understandable, we have added an optimization part for HM and MS. Overall, the proposed device can be useful for higher frequency and low-circuit applications. All simulated results are carried out using 2-D ATLAS software.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Bandi Venkata Chandan
    • 1
    Email author
  • Kaushal Nigam
    • 2
  • Dheeraj Sharma
    • 1
  • Vinay Anand Tikkiwal
    • 2
  1. 1.PDPM-India Institute of Information Technology Design and ManufacturingJabalpurIndia
  2. 2.Jaypee Institute of Information TechnologyNoidaIndia

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