Abstract
The calculation of the linear optical absorption (OA) coefficients is carried out in a \(\delta\)-doped AlGaAs/GaAs triple-quantum well (\(\delta\)-TQW) under the effects of an external electric and magnetic fields. We use a \(\delta\)-doping at the middle of each quantum well. The effects of \(\delta\)-doping on the energy transitions and OA of the \(\delta\)-TQW are also discussed. The optical response is calculated in the framework of the intersubband transitions model and the rotating wave approximation. The OA coefficients are significantly dependent on the values of the different input parameters. The results are given as functions of the \(\delta\)-doping at the single quantum well and of the electric and magnetic field strengths. The responses are tuned in the regime of the mid-infrared electromagnetic spectrum.
References
Hao Feng, J.P. Pang, M. Sugiyama, K. Tada, Y. Nakano, IEEE J. Quantum Electron. 34, 1197 (1998)
Thomas F. Kuech, Susan E. Babcock, Luke Mawst, Appl. Phys. Rev. 3, 040801 (2016)
J.C. Martínez-Orozco, J.G. Rojas-Briseño, K.A. Rodríguez-Magdaleno, I. Rodríguez-Vargas, M.E. Mora-Ramos, R.L. Restrepo, F. Ungan, E. Kasapoglu, C.A. Duque, Phys. B 525, 30 (2017)
K.H. Kim, J. Li, S.X. Jin, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 83, 566 (2003)
Hu Hongpo, Shengjun Zhou, Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu, Sci. Rep. 7, 44627 (2017)
K.L. Vodopyanov, Laser Photon. Rev. 2, 11 (2008)
M. Nakai, S. Sasa, Y. Nakajima, M. Furukawa, M. Inoue, D.C. Larrabee, J. Kono, J. Li, C.Z. Ning, IMFEDK 2004—International Meeting for Future of Electron Devices. Kansai. IEEE. 1566410, 65 (2004)
Chenjie Tang, Yi Lan, Mitra Dutta, Michael A. Stroscio, Junxia Shi, IEEE J. Quantum Electron. 52, 44001081 (2016)
A. Rajira, H. Akabli, A. Almaggousi, A. Abounadi, Superlattice Microst. 84, 192 (2015)
Dongfeng Liu, Everett X. Wang, Kangxian Guo, Phys. E 86, 64 (2017)
N. Zeiri, N. Sfina, S. Abdi-Ben Nasrallah, J.-L. Lazzari, M. Said, Infrared Phys. Technol. 60, 137 (2013)
Mary S. Tobin, John D. Bruno, J. Appl. Phys. 89, 1885 (2001)
Yongmin Kim, J.D. Song, Y. Kohama, J. Korean Phys. Soc. 73, 338 (2018)
Shinji Fukuta, Hideo Goto, Nobuhiko Sawaki, Takamasa Suzuki, Hiroshi Ito, Kunihiko Hara, Semicond. Sci. Technol. 8, 1881 (1993)
C. Bosio, J.L. Staehli, M. Guzzi, G. Burri, R.A. Logan, Phys. Rev. B 38, 3263 (1988)
R.L. Restrepo, A.L. Morales, J.C. Martínez-Orozco, H.M. Baghramyan, M.G. Barseghyan, M.E. Mora-Ramos, C.A. Duque, Phys. B 453, 140 (2014)
E. Rosencher, Ph Bois, Phys. Rev. B 44, 11315 (1991)
Acknowledgements
This research was partially supported by Colombian Agencies: CODI-Universidad de Antioquia (Estrategia de Sostenibilidad de la Universidad de Antioquia and projects: “Efectos ópticos intersubbanda, no lineales de segundo orden y dispersión Raman, en sistemas asimétricos de pozos cuánticos acoplados” and “Efectos de capas delta dopadas en pozos cuánticos como fotodetectores en el infrarrojo”) and Facultad de Ciencias Exactas y Naturales-Universidad de Antioquia (CAD exclusive dedication project 2018-2019 and ALM exclusive dedication project 2018-2019). The authors are grateful to the Universidad EIA and Universidad de Antioquia for their financial support through the EIA-UdeA-UdeM-project “Generación de segundo armónico, rectificación óptica y dispersión Raman entre estados electrónicos en pozos cuánticos acoplados”. LCV and RLR are grateful to Semillero de Investigación Universidad EIA “Nanoestructuras Semiconductoras”.
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Restrepo, R.L., Castaño-Vanegas, L.F., Martínez-Orozco, J.C. et al. Mid-Infrared linear optical transitions in \(\delta\)-doped AlGaAs/GaAs triple-quantum well. Appl. Phys. A 125, 31 (2019). https://doi.org/10.1007/s00339-018-2321-y
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DOI: https://doi.org/10.1007/s00339-018-2321-y