Abstract
In this paper, we report on the fabrication of n-type bottom-gate bottom-contact transistors, based on evaporated films of a perylene diimide derivative (PDI8-CN2), displaying electrical performances comparable to their top-contact counterparts. By combining very thin (20 nm) electrodes and a cleaning process with oxygen plasma, indeed, bottom-contact devices with maximum mobility approaching 0.2 cm2/V s and a contact resistance lower than 35 kΩ cm at low VDS values have been achieved. AFM analyses reveal that the improved electrical responses are accompanied by the optimized PDI8-CN2 film morphology which, very significantly, exhibits similar features on the gold and dielectric (i.e., SiO2) surfaces.
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This work was supported in part by the INFN-CNR national project EOS “Organic Electronics for Innovative research instrumentation”.
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Parlato, L., Sarnelli, E., Cassinese, A. et al. Improving the electrical performance of PDI8-CN2 bottom-gate coplanar organic thin-film transistors. Appl. Phys. A 124, 708 (2018). https://doi.org/10.1007/s00339-018-2130-3
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DOI: https://doi.org/10.1007/s00339-018-2130-3