Applied Physics A

, 124:132 | Cite as

Optoelectrical properties of Ge10Se90 and Ge10Se85Cu5 thin films illuminated by laser beams

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Abstract

The laser irradiation effect on the optoelectrical properties of Ge10Se90 and Ge10Se85Cu5 thin films in the view of Cu-doping effect has been investigated. The illumination effect leads to structural changes in compositions that result from electron–hole excitations, defect creation/modification, and subsequently atomic motions. The dispersion of the refractive index is discussed in terms of the single-oscillator model, non-linear optics, coordination number and lone-pair electrons. Adding Cu to the host glass decreased the band gap (photo-darkening effect). The optoelectrical properties of the studied films have been investigated in the view of the high-frequency dielectric constant\({ \epsilon }_{\infty }\), volume and surface energy loss functions VELF and SELF, the dielectric loss factor\(\delta\), the plasma frequency\({w}_{\text{p}}\), and the damping frequency\({ w}_{\text{d}}\). The above mentioned parameters are revealed to be effected upon Cu doping as well as laser irradiation. Our findings can be utilized in device applications for laser-activated switches and memories.

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Notes

Acknowledgements

This work was done according to the agreement between Faculty of Education, Ain Shams University (Cairo-Egypt) (Prof. Suzan Fouad) and Faculty of Science and Technology, Debrecen University (Debrecen-Hungary) (Prof. Sándor Kökényesi).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Nano-Science and Semiconductor Laboratories, Department of Physics, Faculty of EducationAin Shams UniversityCairoEgypt

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