From the literature, it is reported that electric field can enhance the diffusivity of charged hydrogen species in crystalline silicon. Nevertheless, little research has focused on investigating the effect of electric field on influencing the hydrogen-defect bonding processes. In this paper, we monitored the performance of hydrogen passivation under the varied electric field. It was found that electric field can enhance the extent of hydrogenation to certain defects, which was attributed to the rapid spread of charged hydrogen species to localized defects under the electric field. The increase in photoluminescence response and effective lifetime (at injection level 1 × 1015 cm−3) both confirmed a better hydrogenation under the appropriate electric field. The outcome of deep level transient spectroscopy further revealed a reduction in defect density and a shift of defect energy level with increasing electric field.
KeywordsThermal Annealing Defect Density Deep Level Transient Spectroscopy Silicon Bulk Injection Level
The author would like to thank Hangzhou Dianzi University for the funding ZX150204307002/016 to support this research.
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Conflict of interest
The authors declare that they have no conflict of interest.
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