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Applied Physics A

, 122:836 | Cite as

Black Germanium fabricated by reactive ion etching

  • Martin SteglichEmail author
  • Thomas Käsebier
  • Ernst-Bernhard Kley
  • Andreas Tünnermann
Article
  • 255 Downloads

Abstract

A reactive ion etching technique for the preparation of statistical “Black Germanium” antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids’ base edges are oriented along the <110> crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis–NIR, the tapered Black Germanium surface structure suppresses interface reflection to <2.5 % for normal incidence and still to <6 % at an angle of incidence of 70°. The presented Black Germanium might find applications as low-cost AR structure in optoelectronics and IR optics.

Keywords

Etching Process CHF3 Black Silicon Germanium Oxide Sidewall Angle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgments

The authors gratefully acknowledge the financial support by the fo+ (Contract No. 03WKCK1D) funding program of the German Federal Ministry of Education and Research.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Institute of Applied Physics, Abbe Center of PhotonicsFriedrich Schiller University JenaJenaGermany
  2. 2.Fraunhofer Institute for Applied Optics and Precision Engineering IOFJenaGermany

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