We calculated the connection probability, PC, between electrodes on the basis of the triangular lattice percolation model for investigating the effect of distance variation between electrodes and the electrode width on fabricated capacitively coupled single-electron transistors. Single-electron devices were fabricated via the dispersion of gold nanoparticles (NPs). The NPs were dispersed via the repeated dropping of an NP solution onto a chip. The experimental results were fitted to the calculated values, and the fitting parameters were compared with the occupation probability, PO, which was estimated for one drop of the NP solution. On the basis of curves of the drain current versus the drain-source voltage (ID−VDS) measured at 77 K, the current was suppressed at approximately 0 V.
Gate Voltage Percolation Theory Percolation Model Occupation Probability Coulomb Blockade
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We thank members of our laboratory for critical discussions. This work was partly supported by JSPS KAKENHI Grant Number 15K13999 and by CREST, JST.