Observation of enhanced field emission properties of Au/TiO2 nanocomposite
- 239 Downloads
Simple and low-cost method of thermal annealing was used to decorate Gold (Au) nanoparticles on aligned TiO2 nanotubes. The aligned TiO2 nanotubes were decorated by Au nanoparticles with an average diameter of 9, 18 and 28 nm (aligned TiO2 nanotubes referred as specimen A and TiO2 nanotubes decorated by Au nanoparticles with average diameter of 9, 18 and 28 nm are referred as specimen B, C and D, respectively). The detailed characterization such as structural, morphological and elemental analysis of TiO2 and Au/TiO2 nanocomposite have been carried out using X-ray diffraction, field emission scanning electron microscope, transmission electron microscope, X-ray photoelectron spectroscopy and Raman spectroscopy. Furthermore, the meticulous comparative field emission characteristics of the aligned TiO2 nanotubes and Au/TiO2 nanocomposite have been performed. The turn-on field defined for the current density of 10 μA/cm2 has been found to be 3.9, 2.8, 3.2 and 3.7 V/μm for specimen A, B, C and D, respectively. The observed low turn-on field of specimen B has been found to be superior than the other semiconducting nanocomposites reported in the literature. The emission current stability over a period of 3 h is found to be better for all the specimens. To the best of our knowledge, a systematic field emission study of Au/TiO2 nanocomposite has not been explored. The observed superior field emission study of Au/TiO2 nanocomposite indicates their possible use in micro/nanoelectronic devices.
KeywordsTiO2 TiO2 Nanotubes Field Emission Scanning Electron Microscope Image Titanium Foil Field Emission Property
GPP and PGC sincerely thank to SERB DST, Government of India (Ref. No.: SB/EMEQ-208/2013 dated 23/08/2013) for financial support. GPP and PGC also thank UGS SAP-BSR Phase-III project for financial support.
Compliance with ethical standards
Conflict of interest
The authors declare that they have no conflict of interest.
- 3.R.W. Siegel, in Physics of New Materials, Chap. 4, ed. by F.E. Fujita (Springer, Berlin, 1994)Google Scholar
- 5.H. Gleiter, Z. Metall. 86, 78 (1995)Google Scholar
- 23.B.H. Ma, Y. Li, C.W. Wang, J. Wang, J.B. Chen, W.M. Liu, Acta Phys. Sin. 57, 5800 (2008)Google Scholar
- 25.L.C. Almeida, M.V.B. Zanoni, J. Braz. Chem. Soc. 25, 579 (2014)Google Scholar
- 34.T. Maiyalagan, B. Viswanathan, U.V. Varadaraju, Bull. Mater. Sci. 29(7), 705 (2006)Google Scholar
- 42.S. Wang, Fundamentals of Semiconductor Theory and Device Physics, vol. 131 (Prentice-Hall Inc., New Jersey, 1989)Google Scholar