Applied Physics A

, Volume 121, Issue 3, pp 1271–1276 | Cite as

Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

  • Jingtao Zhao
  • Zhaojun Lin
  • Quanyou Chen
  • Ming Yang
  • Peng Cui
  • Yuanjie Lv
  • Zhihong Feng
Article
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Accepted:

Abstract

In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and current–voltage (I–V) characteristics and the polarization effect of the heterostructures. We found that the Ni/Au gate electrode showed a good thermal stability when the RTA temperature is below 400 °C; however, with further increase in the annealing temperature, the 2DEG sheet density under the Ni/Au Schottky contact started to decline dramatically, and the device started to exhibit bad pinch-off characteristics after a 700 °C RTA. We also found that the RTA process could change the strain and even damaged the crystal structure of the barrier layer under the gate electrodes.

Keywords

Barrier Layer Ohmic Contact Rapid Thermal Annealing Schottky Contact Gate Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113), the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110131110005).

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Copyright information

© Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • Jingtao Zhao
    • 1
  • Zhaojun Lin
    • 1
  • Quanyou Chen
    • 1
  • Ming Yang
    • 1
  • Peng Cui
    • 1
  • Yuanjie Lv
    • 2
  • Zhihong Feng
    • 2
  1. 1.School of PhysicsShandong UniversityJinanChina
  2. 2.National Key Laboratory of Application Specific Integrated Circuit (ASIC)Hebei Semiconductor Research InstituteShijiazhuangChina

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