Electrical conduction mechanism of poly(3,4-ethylenedioxythiophene) nanofiber bundles at low temperature
- 213 Downloads
Abstract
The nature of charge transport mechanism in poly(3,4-ethylenedioxythiophene) nanofiber bundles has been studied as a function of temperature, magnetic field and AC electric field. High-resolution transmission electron micrographs show the formation of nanofibers with an average diameter of 14 nm. X-ray diffraction analysis depicts the enhancement of polymer chains ordering with increasing dopant concentration. Analysis of the temperature dependence of resistivity reveals a three-dimensional variable range hopping electrical conduction mechanism in the synthesized nanofibers system. A large positive magnetoresistance has been observed at low temperature, which shows a decreasing trend with increasing temperature as well as dopant concentration. The high value of positive magnetoresistance at low temperature has been explained by the wave function shrinkage model. The decrease in frequency exponent s with increasing temperature suggests that the AC conduction takes place through correlated barrier hopping mechanism.
Keywords
Localization Length Sodium Dodecyl Sulfate Concentration Effective Barrier Height Charge Transport Mechanism Positive MagnetoresistanceNotes
Acknowledgments
Authors acknowledge the financial support provided by UGC-DAE-CSR Indore Centre, India, through project Grant No. CSR-I/CRS-50/50. Authors sincerely thank Dr. R. Rawat Scientist UGC-DAE-CSR Indore Centre and Dr. K. Asokan Scientist IUAC for providing the facilities to carry out the DC resistivity, magnetoresistance and AC conductivity measurements and for their scientific discussion during the experiment.
References
- 1.S. Bhadra, D. Khastgir, N.K. Singha, J.H. Lee, Prog. Polym. Sci. 34, 783 (2009)CrossRefGoogle Scholar
- 2.L. Mazerolles, S. Folch, P. Colomban, Macromolecules 32, 8504 (1999)ADSCrossRefGoogle Scholar
- 3.J.C. Blakesley, D. Neher, Phys. Rev. B 84, 075210 (2011)ADSCrossRefGoogle Scholar
- 4.L.B. Schein, A. Tyutnev, J. Phys. Chem. C 112, 7295 (2008)CrossRefGoogle Scholar
- 5.N.F. Mott, E.A. David, Electronic Processes in Noncrystalline Materials (Oxford University Press, Oxford, 1979)Google Scholar
- 6.S. Timpanaro, M. Kemerink, F.J. Touwslager, M.M. De Kok, S. Schrader, Chem. Phys. Lett. 394, 339 (2004)ADSCrossRefGoogle Scholar
- 7.L. Groenendaal, G. Zotti, P.H. Aubert, S.M. Waybright, J.R. Reynolds, Adv. Mater. 15, 855 (2003)CrossRefGoogle Scholar
- 8.C. Li, T. Imae, Macromolecules 37, 2411 (2004)ADSCrossRefGoogle Scholar
- 9.J.I. Hong, I.H. Yeo, W.K. Paik, J. Electrochem. Soc. 148, 156 (2001)CrossRefGoogle Scholar
- 10.S.I. Cho, W.J. Kwon, S.-J. Choi, P. Kim, S.-A. Park, J. Kim, S.J. Son, R. Xiao, S.-H. Kim, S.B. Lee, Adv. Mater. 17, 171 (2005)CrossRefGoogle Scholar
- 11.P. Desai, P. Shakya, T. Kreouzis, W. Gillin, N. Morley, M. Gibbs, Phys. Rev. B 75, 094423 (2007)ADSCrossRefGoogle Scholar
- 12.D.Z. Yang, F.C. Wang, Y. Ren, Yl Zuo, Y. Peng, S.M. Zhou, D.S. Xue, Adv. Funct. Mater. 23, 2918 (2013)CrossRefGoogle Scholar
- 13.L.B. Groenendaal, G. Zotti, P.-H. Aubert, S.M. Waybright, J.R. Reynolds, Adv. Mater. 15, 855 (2003)CrossRefGoogle Scholar
- 14.M.G. Han, S.H. Foulger, Small 10, 1164 (2006)CrossRefGoogle Scholar
- 15.C.S.S. Sangeeth, M. Jaiswal, R. Menon, J. Phys. Condens. Matter 21, 072101 (2009)ADSCrossRefGoogle Scholar
- 16.T.V.A.G. de Oliveira, M. Gobbi, J.M. Porro, L.E. Hueso, A.M. Bittner, Nanotechnology 24, 475201 (2013)CrossRefGoogle Scholar
- 17.A. Aleshin, R. Kiebooms, R. Menon, A.J. Heeger, Synth. Met. 90, 61 (1997)CrossRefGoogle Scholar
- 18.K.E. Aasmundh, E.J. Samuelsent, L.A.A. Pettersson, O. Inganas, T. Johansson, R. Feidenhans, Synth. Met. 101, 561 (1999)CrossRefGoogle Scholar
- 19.B. Gupta, M. Mehta, A. Melvin, R. Kamalakannan, S. Dash, M. Kamruddin, A.K. Tyagi, Mater. Chem. Phys. 147, 867 (2014)CrossRefGoogle Scholar
- 20.H.J. Shin, S.S. Jeon, S.S. Im, Synth. Met. 161, 1284 (2011)CrossRefGoogle Scholar
- 21.S. Xiong, L. Zhang, X. Lu, Polym. Bull. 70, 237 (2013)CrossRefGoogle Scholar
- 22.Q. Zhao, R. Jamal, L. Zhang, M. Wang, T. Abdiryim, Nano. Res. Lett. 9, 557 (2014)CrossRefGoogle Scholar
- 23.A.G. Zabrodskii, K.N. Zeninova, Zh. Eksp. Teor. Fiz. 86, 727 (1984)Google Scholar
- 24.G. Chakraborty, K. Gupta, D. Rana, A.K. Meikap, Adv. Nat. Sci. Nanosci. Nanotechnol. 3, 035015 (2012)ADSCrossRefGoogle Scholar
- 25.M.C. Morvant, J.R. Reynolds, Synth. Met. 92, 57 (1998)CrossRefGoogle Scholar
- 26.J.Y. Kim, J.H. Jung, D.E. Lee, J. Joo, Synth. Met. 126, 311 (2002)CrossRefGoogle Scholar
- 27.M. Ghosh, A. Barman, S.K. De, S. Chatterjee, J. Appl. Phys. 84, 806 (1998)ADSCrossRefGoogle Scholar
- 28.S. Capaccioliyz, M. Lucchesiy, P.A. Rollay, G. Ruggerix, J. Phys. Condens. Matter 10, 5595 (1998)ADSCrossRefGoogle Scholar
- 29.Y.-K. Lan, C.-I. Huang, J. Phys. Chem. B 112, 14857 (2008)CrossRefGoogle Scholar
- 30.A.L. Efros, B.I. Shklovskii, Electronic Properties of Doped Semiconductors (Springer, New York, 1984)Google Scholar
- 31.S.A. Rutledge, A.S. Helmy, J. Appl. Phys. 114, 133708 (2013)ADSCrossRefGoogle Scholar
- 32.H. Takatsu, J.J. Ishikawa, S. Yonezawa, H. Yoshino, T. Shishidou, T. Oguchi, K. Murata, Y. Maeno, Phys. Rev. Lett. 111, 056601 (2013)ADSCrossRefGoogle Scholar
- 33.R. Menon, Organic Photovoltaics (Springer Verlag, New York, 2003), pp. 91–117CrossRefGoogle Scholar
- 34.A.K. Mukherjee, R.J. Menon, Phys. Condens. Matter 17, 1947 (2005)ADSCrossRefGoogle Scholar
- 35.S.R. Elliott, Solid State Ion. 27, 131 (1988)CrossRefGoogle Scholar
- 36.A. Dey, S. De, A. De, S.K. De, Nanotechnology 15, 1277 (2004)ADSCrossRefGoogle Scholar
- 37.A.M. Farid, A.E. Bekheet, Vacuum 59, 932 (2000)CrossRefGoogle Scholar
- 38.F. Gmati, A. Fattoum, N. Bohli, A.B. Mohamed, J. Phys. Condens. Matter 20, 125221 (2008)ADSCrossRefGoogle Scholar