Fabrication and micro-photoluminescence property of CdSe/CdS core/shell nanowires
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Hetero-epitaxial CdSe/CdS core/shell nanowires (NWs) were prepared by a source-controllable chemical vapor deposition method. A two-stage growth mechanism was proposed to the growth process of the core/shell NWs. Micro-photoluminescence (μ-PL) property of individual NW was studied by a confocal microscopy system. The pure CdSe NW emits a red light with peak at 712.3 nm, which is inconsistent with the CdSe band-edge emission. The CdSe/CdS core/shell NW emits two apparent peaks, one is an intensive red emission peak centered at 715.2 nm and the other is a weak green emission peak located at 516.2 nm. The room temperature μ-PL spectrum shows that the PL intensity of CdSe NW was evidently promoted by coating the CdS shell, and this is because CdS improves the surface state optimizing the energy band structure of CdSe NW. The as-synthesized CdSe/CdS core/shell NW has more efficient PL quantum yields than pure CdSe NW and may find potential applications in nanoscale photonic devices.
KeywordsEnergy Band Structure CdSe Core Pure CdSe Treat Silicon Wafer Unsaturated Dangling Bond
This work was supported by the NSF of China (Nos. 51002009, 51302078 and 61275174), Hunan provincial Natural Science Foundation of China (No. 13jj3005) and Fundamental Research Funds for the Central South Universities (No. 2012QNZT055).
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