Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair
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One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.
KeywordsRuthenium Ruthenium Oxidation Average Electron Energy Purification Time Methylcyclopentadienyl
A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, US Department of Energy. HP acknowledges the support from Prof. Ferdinand Hofer and the Austrian Cooperative Research (ACR) and the Graz University of Technology in Austria. BBL acknowledges support via the University of Tennessee Chancellor’s Fellowship program. MGS acknowledges support from the National Defense Science and Engineering Graduate Fellowship funded through the AFOSR. PDR and JHN acknowledge support from Intel Corporation (and Ted Liang as program mentor) via the direct funding program at the Semiconductor Research Corporation (SRC-2012-In-2310). PDR and JDF acknowledge Cheryl Hartfield at Omniprobe, Inc. (an Oxford Instruments Company) for assistance with the OmniGIS gas injection system.
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