Flexible Ag electrode for quantum dot light-emitting diode
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Abstract
In this paper, we have fabricated quantum dot light-emitting diode (QD-LED) based on silver (Ag) electrode. The QD-LED with Ag electrode is demonstrated with decreased leakage current, improved luminous efficiency, low turn-on voltages, and saturated emission exhibiting the Commission Internationale de l’Enclairage coordinates of (0.59, 0.40). Meanwhile, compared to the QD-LED with indium tin oxide-coated polyethylene terephthalate electrode, the electroluminescence intensity was enhanced twice for QD-LED based on Ag electrode, and turn-on voltage was reduced to 4.7 V, which was attributed to the higher conductivity and better transmission of Ag electrode.
Keywords
Hole Transport Layer Ethylenedioxythiophene Hole Injection Layer Saturated Emission Flexible Flat Panel DisplayNotes
Acknowledgments
This work was supported partially by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803, and 2010CB327705), the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004), the National Natural Science Foundation Project (51002031, 61007036, 61101023, 51202028, 61106055, 51372039, and 61271053), the Foundation of Doctoral Program of Ministry of Education under Grant (20120092120025), and the Chinese 111 Project (B07027). Natural Science Foundation of Jiangsu Province of China (BK20141390).
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