Applied Physics A

, Volume 115, Issue 4, pp 1115–1119 | Cite as

Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier

Rapid communication

Abstract

Blue light-emitting diodes (LEDs) with different p-doping concentrations in the last barrier have been studied numerically. The energy band diagrams, carrier concentrations, internal quantum efficiency and light output power are investigated using APSYS software. The simulation results show that the LED structure with p-doping in the last barrier has a better hole-injection efficiency and confinement of electron leakage over the structure with the last undoped GaN barrier due to enhancement of the holes’ injection and the electrons’ confinement. As a result, the efficiency droop is markedly improved, and the light output power is greatly enhanced when a larger p-doping amount is centralised in the last barrier.

References

  1. 1.
    Y.L. Li, Y.R. Huang, Y.H. Lai, Appl. Phys. Lett. 91, 181113 (2007)ADSCrossRefGoogle Scholar
  2. 2.
    M.H. Kim, M.F. Schubert, Q. Dai, J.K. Kim, E.F. Schubert, J. Piprek, Y. Park, Appl. Phys. Lett. 91, 183507 (2007)ADSCrossRefGoogle Scholar
  3. 3.
    M.F. Schubert, J. Xu, J.K. Kim, E.F. Schubert, M.H. Kim, S. Yoon, S.M. Lee, C. Sone, T. Sakong, Y. Park, Appl. Phys. Lett. 93, 041102 (2008)ADSCrossRefGoogle Scholar
  4. 4.
    A. David, M.J. Grundmann, J.F. Kaeding, N.F. Gardner, T.G. Mihopoulos, M.R. Krames, T.G. Mihopoulos, Appl. Phys. Lett. 92, 053502 (2008)ADSCrossRefGoogle Scholar
  5. 5.
    M.F. Schubert, S. Chhajed, J.K. Kim, E.F. Schubert, D.D. Koleske, M.H. Crawford, S.R. Lee, A.J. Fischer, G. Thaler, M.A. Banas, Appl. Phys. Lett. 91, 231114 (2007)ADSCrossRefGoogle Scholar
  6. 6.
    J. Hader, J.V. Moloney, S.W. Koch, Appl. Phys. Lett. 96, 221106 (2010)ADSCrossRefGoogle Scholar
  7. 7.
    B. Monemar, B.E. Sernelius, Appl. Phys. Lett. 91, 181103 (2007)ADSCrossRefGoogle Scholar
  8. 8.
    B.J. Ahn, T.S. Kim, Y. Dong, M.T. Hong, J.H. Song, J.H. Song, H.K. Yuh, S.C. Choi, D.K. Bae, Y. Moon, Appl. Phys. Lett. 100, 031905 (2012)ADSCrossRefGoogle Scholar
  9. 9.
    I.V. Rozhansky, D.A. Zakheim, Semiconductors 40, 839 (2006)ADSCrossRefGoogle Scholar
  10. 10.
    I.V. Rozhansky, D.A. Zakheim, Phys. Status Solidi A 204, 227 (2007)ADSCrossRefGoogle Scholar
  11. 11.
    M.H. Kim, M.F. Schubert, Q. Dai, J.K. Kim, E.F. Schubert, J. Piprek, Y. Park, Appl. Phys. Lett. 91, 183507 (2007)ADSCrossRefGoogle Scholar
  12. 12.
    Y.C. Shen, G.O. Müller, S. Watanabe, N.F. Gardner, A. Munkholm, M.R. Krames, Appl. Phys. Lett. 91, 141101 (2007)ADSCrossRefGoogle Scholar
  13. 13.
    K.T. Delaney, P. Rinke, C.G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009)ADSCrossRefGoogle Scholar
  14. 14.
    M.H. Kim, M.F. Schubert, Q. Dai, J.K. Kim, E.F. Schubert, J. Piprek, Y. Park, Appl. Phys. Lett. 91, 183507 (2007)ADSCrossRefGoogle Scholar
  15. 15.
    M.F. Schubert, J. Xu, J.K. Kim, E.F. Schubert, M.H. Kim, S. Yoon, S.M. Lee, C. Sone, T. Sakong, Y. Park, Appl. Phys. Lett. 93, 041102 (2008)ADSCrossRefGoogle Scholar
  16. 16.
    Y.K. Kuo, J.Y. Chang, M.C. Tasi, S.H. Yen, Appl. Phys. Lett. 95, 011116 (2009)ADSCrossRefGoogle Scholar
  17. 17.
    J.Y. Chang, M.C. Tsai, Y.K. Kuo, Opt. Lett. 35, 1368 (2010)ADSCrossRefGoogle Scholar
  18. 18.
    C.H. Wang, C.C. Ke, C.Y. Lee, S.P. Chang, W.T. Chang, J.C. Li, Z.Y. Li, H.C. Yang, H.C. Kuo, T.C. Lu, S.C. Wang, Appl. Phys. Lett. 97, 261103 (2010)ADSCrossRefGoogle Scholar
  19. 19.
    S.H. Han, C.Y. Cho, S.J. Lee, T.Y. Park, T.H. Kim, S.H. Park, S.W. Kang, J.W. Kim, Y.C. Kim, S.J. Park, Appl. Phys. Lett. 96, 051113 (2010)ADSCrossRefGoogle Scholar
  20. 20.
    J. Xie, X.F. Ni, Q. Fan, R. Shimada, Ü. Özgür, H. Morkoc, Appl. Phys. Lett. 93, 121107 (2008)ADSCrossRefGoogle Scholar
  21. 21.
    I. Vurgaftman, J.R. Meyer, J. Appl. Phys. 94, 3675 (2003)ADSCrossRefGoogle Scholar
  22. 22.
    C.H. Wang, S.P. Chang, P.H. Ku, J.C. Li, Y.P. Lan, C.C. Lin, H.C. Yang, H.C. Kuo, T.C. Lu, S.C. Wang, Appl. Phys. Lett. 99, 171106 (2011)ADSCrossRefGoogle Scholar
  23. 23.
    S.Y. Hwang, J.H. Woo, K.K. Jong, J.R. Xu, J.H. Cho, E.F. Schubert, Appl. Phys. Lett. 99, 181115 (2011)ADSCrossRefGoogle Scholar
  24. 24.
    H.J. Li, J. Kang, P. Li, J. Ma, H. Wang, X.Y. Yi, G.H. Wang, Appl. Phys. Lett. 102, 011105 (2013)ADSCrossRefGoogle Scholar
  25. 25.
    C.H. Wang, C.C. Ke, C.Y. Lee, S.P. Chang, W.T. Chang, J.C. Li, Z.Y. Li, H.C. Yang, H.C. Kuo, T.C. Lu, S.C. Wang, Appl. Phys. Lett. 97, 261103 (2010)ADSCrossRefGoogle Scholar
  26. 26.
    Z.Q. Li, L. Michel, Y.G. Xiao, Z.S. Li, Jpn. J. Appl. Phys. 50, 080212 (2011)ADSCrossRefGoogle Scholar
  27. 27.
    T.P. Lu, S.T. Li, C. Liu, K. Zhang, Y.Q. Xu, J.H. Tong, L.J. Wu, H.L. Wang, X.D. Yang, Y. Yin, G.W. Xiao, Y.G. Zhou, Appl. Phys. Lett. 100, 141106 (2012)ADSCrossRefGoogle Scholar
  28. 28.
    S.H. Han, C.Y. Cho, S.J. Lee, T.Y. Park, T.H. Kim, S.H. Park, S.W. Kang, J.W. Kim, Y.C. Kim, S.J. Park, Appl. Phys. Lett. 96, 051113 (2010)ADSCrossRefGoogle Scholar
  29. 29.
    A. David, M.J. Grundmann, J.F. Kaeding, N.F. Gardner, T.G. Mihopoulos, M.R. Krames, T.G. Mihopoulos, Appl. Phys. Lett. 92, 053502 (2008)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  1. 1.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and TechnologySouth China Normal UniversityGuangzhouPeople’s Republic of China
  2. 2.Center for Semiconductor LightingChinese Academy of SciencesBeijingPeople’s Republic of China

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