Applied Physics A

, Volume 114, Issue 4, pp 1055–1059 | Cite as

Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

  • Taiping Lu
  • Ziguang Ma
  • Chunhua Du
  • Yutao Fang
  • Fangsheng Chen
  • Yang Jiang
  • Lu Wang
  • Haiqiang Jia
  • Hong Chen
Rapid communication

Abstract

InGaN-based light-emitting diodes with graded indium composition p-type InGaN hole reservoir layer (HRL) are numerically investigated using the APSYS simulation software. It is found that by gradient increasing indium composition in growth direction of the p-InGaN HRL can improve light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and optical characteristics are attributed mainly to tailoring energy band in p–n junction vicinal region, and finally enhanced the hole injection efficiency and electron blocking efficiency.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Taiping Lu
    • 1
  • Ziguang Ma
    • 1
  • Chunhua Du
    • 1
  • Yutao Fang
    • 1
  • Fangsheng Chen
    • 1
    • 2
  • Yang Jiang
    • 1
  • Lu Wang
    • 1
  • Haiqiang Jia
    • 1
  • Hong Chen
    • 1
  1. 1.Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of PhysicsChinese Academy of SciencesBeijingPeople’s Republic of China
  2. 2.Institute of Opto-Electronic Materials and Technology, South China Normal UniversityGuangzhouPeople’s Republic of China

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