Applied Physics A

, Volume 116, Issue 3, pp 1467–1472 | Cite as

Effect of post deposition by UV irradiation on chemical bath deposited tin sulfide thin films

  • A. C. Dhanya
  • K. Deepa
  • P. M. Geetanjali
  • M. Anupama
  • T. L. Remadevi
Article
First Online:
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Accepted:

Abstract

Tin sulfide thin films have been grown on glass substrates by chemical bath deposition technique (CBD) at room temperature and irradiated with UV light source of wavelength 355 nm. The effect of UV illumination on the physical properties of the films was compared with that of the as-prepared film. Though the thickness of the films was unaltered after illumination, the structural, optical and electrical properties changed considerably. Structural studies showed the polycrystalline nature of the UV-illuminated sample, whereas the as-prepared film was mono crystalline. Both films were orthorhombic structure with Sn2S3 phase. The optical properties of the films were systematically studied using the optical absorbance and reflection spectra. Studies on the reflection spectra showed higher reflectance in visible and infrared region for the UV-illuminated films and lower reflectance in the infrared region for the as-prepared one. The variation of the refractive index of the samples was also analyzed. The optical absorption coefficient and the optical band gap energy of the films were evaluated. The irradiated film exhibited lower band gap of 1.74 eV than the value of as-prepared film, i.e., 1.77 eV. The measured resistivity of the tin sulfide thin films was found to be of the order of 108 and 109 Ωcm for UV-illuminated and as-prepared films, respectively. The SEM images showed the presence of worm-like nanostructures with almost similar appearance in both the films.

Keywords

Chemical Bath Deposition SnS2 Lower Energy Band Irradiate Film Chemical Bath Deposition Method 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

The authors express their sincere gratitude to SAIF STIC, CUSAT and SAIF STIC, IIT, Madras for offering technical support. One of the authors (TLR) acknowledges KSCSTE for financial support under the project 001/SRSPS/2008/CSTE.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • A. C. Dhanya
    • 1
  • K. Deepa
    • 1
    • 2
  • P. M. Geetanjali
    • 2
  • M. Anupama
    • 2
  • T. L. Remadevi
    • 1
    • 2
  1. 1.School of Pure and Applied PhysicsKannur UniversityKannurIndia
  2. 2.Department of PhysicsPazhassi Raja N.S.S. CollegeMattannurIndia

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